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Volumn 56, Issue 7, 1997, Pages 3820-3833

Interstitial oxygen in germanium and silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000202073     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.3820     Document Type: Article
Times cited : (62)

References (33)
  • 11
    • 0001409791 scopus 로고
    • E. Artacho and F. Ynduráin, in Proceedings of the 22nd International Conference on the Physics of Semiconductors, edited by D. J. Lockwood (World Scientific, Singapore, 1995), p. 2459
    • E. Artacho, A. Lizón-Nordström, and F. Ynduráin, Phys. Rev. B 51, 7862 (1995); E. Artacho and F. Ynduráin, in Proceedings of the 22nd International Conference on the Physics of Semiconductors, edited by D. J. Lockwood (World Scientific, Singapore, 1995), p. 2459.
    • (1995) Phys. Rev. B , vol.51 , pp. 7862
    • Artacho, E.1    Lizón-Nordström, A.2    Ynduráin, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.