Photoluminescence from photochemically etched highly resistive silicon

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 249-253

  Hadjersi, T ^a   Gabouze, N ^a   Yamamoto, N ^b   Sakamaki, K ^c   Takai, H ^c  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

Photo chemical etching; Photoluminescence; Porous silicon; Quantum effects

Indexed keywords

ETCHING; HELIUM NEON LASERS; IRRADIATION; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS;

PHOTO-CHEMICAL ETCHING; QUANTUM EFFECTS;

THIN FILMS;

EID: 2942625874     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.103     Document Type: Conference Paper

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