Formation mechanism of silicon based luminescence material using a photo chemical etching method

Thin Solid Films

Volumn 388, Issue 1-2, 2001, Pages 138-142

  Yamamoto, Naokatsu ^b   Takai, Hiroshi ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

Etching; Photon emission; Quantum effects; Silicon

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ETCHING; HELIUM NEON LASERS; MIXTURES; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; QUANTUM THEORY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS;

PHOTOCHEMICAL ETCHING;

OPTICAL MATERIALS;

EID: 0035372148     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)00767-2     Document Type: Article

References (9)