Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

Solar Energy Materials and Solar Cells

Volumn 83, Issue 4, 2004, Pages 459-477

  Fiechter, S ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Defect formation energy; Homogeneity region; Schottky constant

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ENERGY GAP; INTERFACIAL ENERGY; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PARTIAL PRESSURE; POINT DEFECTS; PYRITES;

ELECTRON AFFINITY; UNIT CELLS; WORK FUNCTION;

SEMICONDUCTOR MATERIALS;

EID: 2942598044     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.02.036     Document Type: Article

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