Melt growth of ZnGeP2: Homogeneity range and thermochemical properties

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 315-320

  Fiechter, S ^a   Castleberry, R H ^a   Angelov, M ^a   Bachmann, K J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; CRYSTALLIZATION; DIFFERENTIAL THERMAL ANALYSIS; ELECTRIC CONDUCTIVITY MEASUREMENT; METAL MELTING; PHOTOLUMINESCENCE; POINT DEFECTS; PRESSURE EFFECTS; STOICHIOMETRY; VAPOR PRESSURE; X RAY CRYSTALLOGRAPHY;

HORIZONTAL GRADIENT FREEZING; MELTING POINTS; ZINC GERMANIUM PHOSPHIDES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030648427     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)