-
1
-
-
0042658699
-
InGaAs/InP quantum well modulators grown by gas source molecular beam epitaxy
-
June
-
H. Temkin, D. Gershoni, and M. B. Panish, "InGaAs/InP quantum well modulators grown by gas source molecular beam epitaxy," Appl. Phys. Lett, vol. 50, no. 25, pp. 1776-1778, June 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, Issue.25
, pp. 1776-1778
-
-
Temkin, H.1
Gershoni, D.2
Panish, M.B.3
-
2
-
-
0342343173
-
Low loss InGaAs/InP multiple quantum well waveguides
-
Dec.
-
U. Koren, B. I. Miller, T. L. Koch, R. J. Capik, and C. E. Soccolich, "Low loss InGaAs/InP multiple quantum well waveguides," Appl. Phys. Lett. vol. 49, no. 23, pp. 1602-1604, Dec. 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, Issue.23
, pp. 1602-1604
-
-
Koren, U.1
Miller, B.I.2
Koch, T.L.3
Capik, R.J.4
Soccolich, C.E.5
-
3
-
-
0343212851
-
Low absorption InP/InGaAs-MQW phase shifters for optical switching
-
C. G. M. Vreeburg, M. K. Smit, M. Bachman, R. K. R. Kyburz, E. Gini, and H. Melchior, "Low absorption InP/InGaAs-MQW phase shifters for optical switching," in Proc. 7th Eur. Conf. on Integr. Opt. (ECIO'95), Apr. 3-6, 1995, pp. 225-228.
-
(1995)
Proc. 7th Eur. Conf. on Integr. Opt. (ECIO'95)
, pp. 225-228
-
-
Vreeburg, C.G.M.1
Smit, M.K.2
Bachman, M.3
Kyburz, R.K.R.4
Gini, E.5
Melchior, H.6
-
4
-
-
0028387785
-
Electro-optic modulation in a chopped quantum-well electron transfer structure
-
J. E. Zucker, M. D. Divino, T. Y. Chang, and N. Sauer, "Electro-optic modulation in a chopped quantum-well electron transfer structure," Electron. Lett., vol. 30, no. 6, p. 518, 1994.
-
(1994)
Electron. Lett.
, vol.30
, Issue.6
, pp. 518
-
-
Zucker, J.E.1
Divino, M.D.2
Chang, T.Y.3
Sauer, N.4
-
5
-
-
0004186192
-
Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers
-
Mar.
-
B. H. P. Dorren, A. Yu. Silov, M. R. Leys, J. E. M. Haverkort, and J. H. Wolter, "Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers," J. Appl. Phys., vol. 87, no. 5, Mar. 2000.
-
(2000)
J. Appl. Phys.
, vol.87
, Issue.5
-
-
Dorren, B.H.P.1
Silov, A.Yu.2
Leys, M.R.3
Haverkort, J.E.M.4
Wolter, J.H.5
-
6
-
-
0001216586
-
Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells
-
June
-
C. Thirstrup, "Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells," IEEE J. Quantum Electron., vol. 31, pp. 988-996, June 1995.
-
(1995)
IEEE J. Quantum Electron.
, vol.31
, pp. 988-996
-
-
Thirstrup, C.1
-
7
-
-
0001381523
-
Electric field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules
-
Sept.
-
D. A. B. Miller, J. S. Weiner, and D. S. Chemla, "Electric field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules," IEEE J. Quantum Electron, vol. QE-22, pp. 1816-1830, Sept. 1986.
-
(1986)
IEEE J. Quantum Electron
, vol.QE-22
, pp. 1816-1830
-
-
Miller, D.A.B.1
Weiner, J.S.2
Chemla, D.S.3
-
8
-
-
0031213042
-
1-xAs/InP multiple-layer structures grown by chemical beam epitaxy
-
1-xAs/InP multiple-layer structures grown by chemical beam epitaxy," Semicond. Sci. Technol., vol. 12, p. 974, 1997.
-
(1997)
Semicond. Sci. Technol.
, vol.12
, pp. 974
-
-
Rongen, R.T.H.1
Van Rijswijk, A.J.C.2
Leys, M.R.3
Van Es, C.M.4
Wolter, J.H.5
-
9
-
-
0000845002
-
X-ray interference effect as a tool for structural investigation of GaInAs/InP multiple quantum wells
-
T. Marchner, J. Brübach, C. A. Verschuren, M. R. Leys, and J. H. Wolter, "X-ray interference effect as a tool for structural investigation of GaInAs/InP multiple quantum wells," J. Appl. Phys. vol. 83, pp. 3630-3637, 1998.
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 3630-3637
-
-
Marchner, T.1
Brübach, J.2
Verschuren, C.A.3
Leys, M.R.4
Wolter, J.H.5
-
10
-
-
36549104172
-
Quadratic electro-optic effect due to the quantum-confined Stark effect in quantum wells
-
Mar.
-
J. S. Weiner, D. A. B. Miller, and D. S. Chemla, "Quadratic electro-optic effect due to the quantum-confined Stark effect in quantum wells," Appl. Phys. Lett, vol. 50, no. 13, pp. 842-844, Mar. 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, Issue.13
, pp. 842-844
-
-
Weiner, J.S.1
Miller, D.A.B.2
Chemla, D.S.3
-
11
-
-
36149018783
-
Absorption edge of impure gallium arsenide
-
Dec.
-
J. I. Pankove, "Absorption edge of impure gallium arsenide," Phys. Rev. A., vol. 140, no. 6, pp. 2059-2065, Dec. 1965.
-
(1965)
Phys. Rev. A.
, vol.140
, Issue.6
, pp. 2059-2065
-
-
Pankove, J.I.1
-
12
-
-
24444456383
-
Effective masses of holes at GaAs-Al-GaAs heterojunctions
-
Jan.
-
D. A. Broido and L. J. Sham, "Effective masses of holes at GaAs-Al-GaAs heterojunctions," Phys. Rev. B, vol. 31, no. 2, pp. 888-892, Jan. 1985.
-
(1985)
Phys. Rev. B
, vol.31
, Issue.2
, pp. 888-892
-
-
Broido, D.A.1
Sham, L.J.2
-
13
-
-
0000993799
-
Excitons and fundamental absorption in quantum wells
-
May
-
R. Winkler, "Excitons and fundamental absorption in quantum wells," Phys. Rev. B, vol. 51, no. 20, pp. 14395-14409, May 1995.
-
(1995)
Phys. Rev. B
, vol.51
, Issue.20
, pp. 14395-14409
-
-
Winkler, R.1
-
14
-
-
33750668607
-
Band lineups and deformation potentials in the model-solid theory
-
Jan.
-
C. G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B. vol. 39, no. 3, pp. 1871-1883, Jan. 1989.
-
(1989)
Phys. Rev. B.
, vol.39
, Issue.3
, pp. 1871-1883
-
-
Van De Walle, C.G.1
-
15
-
-
0025791052
-
Heterojunction band offsets and effective masses in III-V quarternary alloys
-
M. P. C. M. Krijn, "Heterojunction band offsets and effective masses in III-V quarternary alloys," Semicond. Sci. Tech, vol. 6, pp. 27-31, 1991.
-
(1991)
Semicond. Sci. Tech
, vol.6
, pp. 27-31
-
-
Krijn, M.P.C.M.1
-
16
-
-
0342343169
-
-
Berlin, Germany: Springer-Verlag
-
O. Madelung and M. Schulz, Landolt-Börnstein, Berlin, Germany: Springer-Verlag, 1987, vol. 22a, pp. 72-122.
-
(1987)
Landolt-Börnstein
, vol.22 A
, pp. 72-122
-
-
Madelung, O.1
Schulz, M.2
-
17
-
-
0010674446
-
0.47As/InP quantum wells
-
Nov.
-
0.47As/InP quantum wells," Phys. Rev. B, vol. 42, no. 15, pp. 9587-9597, Nov. 1990.
-
(1990)
Phys. Rev. B
, vol.42
, Issue.15
, pp. 9587-9597
-
-
Suguwara, M.1
Fujii, T.2
Yamazaki, S.3
Nakajiama, K.4
-
18
-
-
0001203202
-
Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy
-
Apr.
-
I. Bar-Joseph, C. Klingshirn, D. A. B. Miller, D. S. Chemla, U. Koren, and B. I. Miller, "Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy," Appl. Phys. Lett., vol. 50, no. 15, pp. 1010-1012, Apr. 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, Issue.15
, pp. 1010-1012
-
-
Bar-Joseph, I.1
Klingshirn, C.2
Miller, D.A.B.3
Chemla, D.S.4
Koren, U.5
Miller, B.I.6
-
19
-
-
0001318198
-
Quadratic electro-optic light modulation in a GaAs/AlGaAs multi quantum well heterostructure near excitonic gap
-
Apr.
-
M. Glick, F. K. Reinhart, G. Weimann, and W. Schlapp, "Quadratic electro-optic light modulation in a GaAs/AlGaAs multi quantum well heterostructure near excitonic gap," Appl. Phys. Lett., vol. 48, no. 15, pp. 989-991, Apr. 1986.
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.15
, pp. 989-991
-
-
Glick, M.1
Reinhart, F.K.2
Weimann, G.3
Schlapp, W.4
-
20
-
-
0021465883
-
Linear electro-optic effects in zincblende-type semiconductors: Key properties of InGaAsP relevant to device design
-
Jan.
-
S. Adachi and K. Oe, "Linear electro-optic effects in zincblende-type semiconductors: Key properties of InGaAsP relevant to device design," J. Appl. Phys., vol. 56, no. 1, pp. 74-80, Jan. 1989.
-
(1989)
J. Appl. Phys.
, vol.56
, Issue.1
, pp. 74-80
-
-
Adachi, S.1
Oe, K.2
-
21
-
-
0002616415
-
Quartemary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55 μm
-
Jan.
-
J. E. Zucker, I. Bar-Joseph, B. I. Miller, U. Koren, and D. S. Chemla, "Quartemary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55 μm," Appl. Phys. Lett., vol. 54, no. 1, pp. 10-12, Jan. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, Issue.1
, pp. 10-12
-
-
Zucker, J.E.1
Bar-Joseph, I.2
Miller, B.I.3
Koren, U.4
Chemla, D.S.5
-
23
-
-
0342343167
-
Integrable polarization insensitive InGaAsP/InP Mach-Zehnder switch
-
T. Uitterdijk, H. van Burg, F. H. Groen, H. J. Frankena, C. G. M. Vreeburg, and J. J. G. M. van der Tol, "Integrable polarization insensitive InGaAsP/InP Mach-Zehnder switch," in Proc. IPR'96, vol. 6, 1996, pp. 486-490.
-
(1996)
Proc. IPR'96
, vol.6
, pp. 486-490
-
-
Uitterdijk, T.1
Van Burg, H.2
Groen, F.H.3
Frankena, H.J.4
Vreeburg, C.G.M.5
Van Der Tol, J.J.G.M.6
|