Hole Mobility in Cr-Doped p-Type β-FeSi2 Single Crystals

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 1, 1998, Pages 187-194

  Arushanov, E ^a   Tomm, Y ^b   Ivanenko, L ^c   Lange, H ^b  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b HAHN MEITNER INSTITUT   (Germany)

^c BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347669746     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199811)210:1<187::AID-PSSB187>3.0.CO;2-F     Document Type: Article

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