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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 780-783
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Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arrays
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DATA REDUCTION;
DOPING (ADDITIVES);
FERMI LEVEL;
HYDROGENATION;
IMAGE SENSORS;
IMAGING SYSTEMS;
SILICON;
SIMULATORS;
CHARGE STORAGE OPERATION;
IMAGING ARRAYS;
SENSORS INTEGRATE CHARGE;
TRANSPARENT CONDUCTIVE OXIDE (TCO);
PHOTOTRANSISTORS;
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EID: 2942585141
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.03.090 Document Type: Conference Paper |
Times cited : (13)
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References (8)
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