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Volumn 53, Issue 5, 1996, Pages 617-625

Theory of low temperature capacitance measurements on amorphous silicon thin film solar cells

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EID: 0346119271     PISSN: 00318949     EISSN: None     Source Type: Journal    
DOI: 10.1088/0031-8949/53/5/022     Document Type: Article
Times cited : (3)

References (27)
  • 4
    • 0025421409 scopus 로고
    • Capacitance studies of a-SiGe : H p-i-n solar cells
    • Hegedus, S. S., "Capacitance studies of a-SiGe : H p-i-n solar cells", Proc. 21st IEEE PV Specialist Conf., 1990, pp. 1544-1549.
    • (1990) Proc. 21st IEEE PV Specialist Conf. , pp. 1544-1549
    • Hegedus, S.S.1
  • 14
    • 0027888142 scopus 로고
    • Monitoring of a-Si: H light induced degradation by low temperature a.c. Conductance
    • Caputo, D., de Cesare, G. and Rossi, M. C., "Monitoring of a-Si: H light induced degradation by low temperature a.c. Conductance" Proc. 23rd IEEE PV Specialist Conf., 1993, pp. 1043-1046.
    • (1993) Proc. 23rd IEEE PV Specialist Conf. , pp. 1043-1046
    • Caputo, D.1    De Cesare, G.2    Rossi, M.C.3
  • 17
    • 20544437238 scopus 로고
    • (Edited by J. I. Pankove) Academic Press, NY
    • See for example, Cohen, J. D., in "Hydrogenated Amorphous Silicon" (Edited by J. I. Pankove) (Academic Press, NY 1984), vol. 21C, pp. 34-51.
    • (1984) Hydrogenated Amorphous Silicon , vol.21 C , pp. 34-51
    • Cohen, J.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.