Photoconductivity in the ternary layered semiconductors

International Journal of Infrared and Millimeter Waves

Volumn 24, Issue 2, 2003, Pages 231-237

  Samedov, S R ^a   Baykan, O ^a  

^a MATERIALS INSTITUTE   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; LIGHT ABSORPTION; OPTOELECTRONIC DEVICES; PHASE TRANSITIONS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

TERNARY LAYERED SEMICONDUCTORS; WAVELENGTH;

SEMICONDUCTOR MATERIALS;

EID: 0142221617     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021946821280     Document Type: Conference Paper

References (5)

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3. K.R. Allakhverdiev, Solid State Commun., 111, 253 (1999).
4. T.S. Moss, Optical Properties of Semiconductors (London-Butterworhs), 1959,p...
5. F.M. Gashimzade, G.S. Orijev, Dokladi AN Azer. SSR, v.36, 18 (1980).