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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 61-64

Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processes

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DIFFUSION; HYDROGEN; ION BOMBARDMENT; MICROSTRUCTURE; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILANES; SURFACE REACTIONS; THIN FILMS;

EID: 2942556977     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.022     Document Type: Conference Paper
Times cited : (5)

References (8)
  • 5
    • 0037794357 scopus 로고
    • G. Brunno, P. Capezzutto, & A. Madan. San Diego, CA: Academic Press
    • Perrin J. Brunno G., Capezzutto P., Madan A. Plasma Deposition of a-Si Materials. 1995;216 Academic Press, San Diego, CA.
    • (1995) Plasma Deposition of a-Si Materials , pp. 216
    • Perrin, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.