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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 61-64
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Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processes
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
DIFFUSION;
HYDROGEN;
ION BOMBARDMENT;
MICROSTRUCTURE;
PHOTOSENSITIVITY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
SILANES;
SURFACE REACTIONS;
THIN FILMS;
FEED GAS DECOMPOSITION;
GROWTH MECHANISMS;
HOT WIRE DEPOSITION;
URBACH ENERGY;
SILICON COMPOUNDS;
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EID: 2942556977
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.02.022 Document Type: Conference Paper |
Times cited : (5)
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References (8)
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