Strong field charge transport in MIS structures based on low-K carbon films

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 326-330

  Zuniga, C ^a   Torres, A ^a   Kosarev, A ^a  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CARBON; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; FILMS; FREQUENCY AGILITY; OPTICAL PROPERTIES; PERMITTIVITY; SILICA; SILICON WAFERS; SUBSTRATES; TEMPERATURE CONTROL; THERMODYNAMIC STABILITY;

CARBON FILMS; FIELD CHARGE; MIS STRUCTURES; SCHOTTKY MECHANISM;

CHARGE TRANSFER;

EID: 2942556941     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.066     Document Type: Conference Paper

References (10)

1. Robertson J. J. Mater. Sci. Eng. R37:2002;129.
2. Lieberman M., Lichtenberg A.J. Principles of Plasma Discharges and Material Processing. 1994;John Wiley. p. 333.
3. Grill A. IBM J. Res. Dev. 43:1999;147.
4. Kosarev A., Torres A., Zuniga C. Proc. Nanotechnol. 3:2003;29.
5. Jonscher A.K. Thin Solid Films. 1:1967;213.
6. May P.W., Höhn S., Wang W.N., Fox N.A. Appl. Phys. Lett. 72:1998;17.
7. Torres A., Kosarev A., Zuniga C. J. Non-Cryst. Solids. 329:2003;175.
8. Lampert M.A., Mark P. Current Injection in Solids. 1970;Academic Press. p. 33.
9. Sze S.M. Physics of Semiconductor Devices. 1981;Wiley, New York.
10. Maguire P.D., Magill D.P., Ogwu A.A., McLaughlin J.A. Diamond Relat. Mater. 10:2001;216.