Evaluation of manganite films on silicon for uncooled bolometric applications

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3846-3848

  Choudhary, R J ^a   Ogale, Anjali S ^a,d   Shinde, S R ^a   Hullavarad, S ^a   Ogale, S B ^a,e   Venkatesan, T ^a   Bathe, R N ^b   Patil, S I ^b   Kumar, Ravi ^c  

^a Bldg 142   (United States)

^b UNIVERSITY OF PUNE   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^d FERGUSSON COLLEGE   (India)

^e Department of Materials Science ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL NOISE; MANGANITE FILMS; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

BOLOMETERS; COMPOSITION; FILM GROWTH; INFRARED DETECTORS; INFRARED IMAGING; LANTHANUM COMPOUNDS; LOW TEMPERATURE EFFECTS; MAGNETORESISTANCE; MEDICAL IMAGING; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SILICON; SINGLE CRYSTALS; THIN FILMS;

AMORPHOUS FILMS;

EID: 2942551125     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1748837     Document Type: Article

References (22)

1. P. L. Richards, J. Appl. Phys. 76, 1 (1994).
2. A. L. Woodcraft, R. V. Sudiwala, P. A. R. Ade, M. J. Griffin, E. Wakui, R. S. Bhatia, A. E. Lange, J. J. Bock, A. D. Turner, M. H. Yun, and J. W. Beeman, Appl. Opt. 42, 5009 (2003).
3. H. Jerominek, F. Picard, and D. Vincent, Opt. Eng. 32, 2092 (1993).
4. C. Chen, X. Yi, X. Zhao, and B. Xiong, Sens. Actuators, A 90, 212 (2001).
5. R. T. R. Kumar, B. Karunagaran, D. Mangalaraj, S. K. Narayandass, P. Manoravi, M. Joseph, V. Gopal, R. K. Madaria, and J. P. Singh, Mater. Res. Bull. 38, 1235 (2003).
6. J. C. Brasunas, S. H. Moseley, B. Lakew, R. H. Ono, D. G. McDonald, J. A. Beall, and J. E. Sauvageau, J. Appl. Phys. 66, 4551 (1989).
7. J. C. Brasunas and B. Lakew, Appl. Phys. Lett. 64, 777 (1994).
8. P. L. Richards, S. Verghese, T. H. Geballe, and S. R. Spielman, IEEE Trans. Magn. 25, 1335 (1989).
9. S. B. Ogale, M. Vedawyas, G. S. T. Bendre, and S. M. Kanetkar, Appl. Phys. Lett. 61, 2105 (1992).
10. K. Li and J. E. Johnson, IEEE Trans. Appl. Supercond. 3, 2111 (1993).
11. P. C. Shan, Z. Celik-Butler, D. P. Butler, and A. Jahanzeb, J. Appl. Phys. 78, 7334 (1995).
12. A. Jahanzeb, C. M. Travers, Z. C. Butler, D. P. Butler, and S. G. Tan, IEEE Trans. Electron Devices 44, 1795 (1997).
13. L. N. Phong and S. N. Qiu, J. Vac. Sci. Technol. 18, 635 (2000).
14. P. Dutta and P. Horn, Rev. Mod. Phys. 53, 497 (1981).
15. M. B. Weissman, Rev. Mod. Phys. 60, 537 (1988).
16. M. B. Salamon and M. Jaime, Rev. Mod. Phys. 73, 583 (2001).
17. Y. Tokura and Y. Tomioka, J. Magn. Magn. Mater. 200, 1 (1999).
18. M. Rajeswari, R. Shreekala, A. Goyal, S. E. Lofland, S. M. Bhagat, K. Ghosh, R. P. Sharma, R. L. Greene, R. Ramesh, T. Venkatesan, and T. Boettcher, Appl. Phys. Lett. 73, 2672 (1998).
19. Y. G. Zhao, W. Cai, J. Zhao, X. P. Zhang, R. Fan, B. S. Cao, M. H. Zhu, T. Wu, S. B. Ogale, S. R. Shinde, T. Venkatesan, Q. Y. Tu, T. K. Mandal, and J. Gopalkrishnan, J. Appl. Phys. 92, 5391 (2002).
20. M. Rajeswari, C. H. Chen, A. Goyal, C. Kwon, M. C. Robson, R. Ramesh, T. Venkatesan, and S. Lakeou, Appl. Phys. Lett. 68, 3555 (1996).
21. M. Uehara, S. Mori, C. H. Chen, and S. W. Cheong, Nature (London) 399. 560 (1999).
22. P. C. Shan, Z. Celik-Butler, D. P. Butler, A. Jahanzeb, C. M. Travers, W. Kula, and R. Sobolewski, J. Appl. Phys. 80, 7118 (1996).