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Volumn 182, Issue 1-2, 2001, Pages 159-166

Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS 1-x Te x epilayers grown by hot-wall epitaxy

(7) Yu, Young Moon a Nam, Sungun a Byungsung, O a Lee, Ki Seon a Choi, Yong Dae b Lee, Jongwon c Yu, Pyeong Yeol d

a Chungnam National University (South Korea)

b Mokwon University (South Korea)

c Hanbat National University (South Korea)

d Sunchon National University (South Korea)

Author keywords

Band gap energy; Epilayers; Hot wall epitaxy; Photoluminescence; ZnS 1 x Te x

Indexed keywords

COMPOSITION EFFECTS; ELECTRON EMISSION; ENERGY GAP; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TERNARY SYSTEMS; THERMAL EFFECTS;

EPILAYERS; HOT-WALL EPITAXY (HWE);

ZINC ALLOYS;

EID: 0035813473 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00550-5 Document Type: Article

Times cited : (5)

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