Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O 2 +

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 693-697

  Huyghebaert, C ^a   Conard, T ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Angular dependence; Energy dependence; Ge; Oxygen bombardment

Indexed keywords

FUNCTIONS; ION BOMBARDMENT; IONIZATION; OXIDATION; POSITIVE IONS; PROBABILITY; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SPUTTERING;

ANGULAR DEPENDENCE; ENERGY DEPENDENCE; IONIZATION PROBABILITY; OXYGEN BOMBARDMENT;

SURFACE CHEMISTRY;

EID: 2942534197     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.188     Document Type: Conference Paper

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