SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 477-484

Characterization of Switching Transient Behaviors in Polycrystalline- Silicon Thin-Film Transistors

(1) Ikeda, Hiroyuki a

a SONY CORPORATION (Japan)

Author keywords

Capture; Drain current; Emission; Grain boundary; Polycrystalline silicon; Thin film transistor; Transient behavior

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; POLYSILICON; THRESHOLD VOLTAGE;

CAPTURE; DRAIN CURRENT; EMISSION; POLYCRYSTALLINE-SILICON; TRANSIENT BEHAVIOR;

THIN FILM TRANSISTORS;

EID: 2142650772 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.477 Document Type: Article

Times cited : (14)

References (31)

1
- 0001128089
- J. R. Ayres: J. Appl. Phys. 74 (1993) 1787.
- (1993) J. Appl. Phys. , vol.74 , pp. 1787
- Ayres, J.R.¹

2
- 0031164162
- G. A. Armstrong, J. R. Ayres and S. D. Brotherton: Solid-State Electron. 41 (1997) 835.
- (1997) Solid-state Electron. , vol.41 , pp. 835
- Armstrong, G.A.¹ Ayres, J.R.² Brotherton, S.D.³

3
- 0032740060
- S. W.-B. Tam, P. Migliorato, O. K. B. Lui and M. J. Quinn: IEEE Trans. Electron Devices 46 (1999) 134.
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 134
- Tam, S.W.-B.¹ Migliorato, P.² Lui, O.K.B.³ Quinn, M.J.⁴

4
- 0013066316
- N. Bavidge, M. Boero, P. Migliorato and T. Shimoda: Appl. Phys. Lett. 77 (2000) 3836.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3836
- Bavidge, N.¹ Boero, M.² Migliorato, P.³ Shimoda, T.⁴

5
- 0019547775
- J.-W. Chen, R. J. Ko, D. W. Brzezinski, L. Forbes and C. J. Dell'Oca: IEEE Trans. Electron Devices 28 (1981) 299.
- (1981) IEEE Trans. Electron Devices , vol.28 , pp. 299
- Chen, J.-W.¹ Ko, R.J.² Brzezinski, D.W.³ Forbes, L.⁴ Dell'Oca, C.J.⁵

6
- 0029252810
- H. Matsuura, M. Yoshimoto and H. Matsunami: Jpn. J. Appl. Phys. 34 (1995) L185.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Matsuura, H.¹ Yoshimoto, M.² Matsunami, H.³

7
- 36549092941
- M. J. Powell, C. V. Berkel and J. R. Hughes: Appl. Phys. Lett. 54 (1989) 1323.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 1323
- Powell, M.J.¹ Berkel, C.V.² Hughes, J.R.³

8
- 0001628840
- C. V. Berkel, J. R. Hughes and M. J. Powell: J. Appl. Phys. 66 (1989) 4488.
- (1989) J. Appl. Phys. , vol.66 , pp. 4488
- Berkel, C.V.¹ Hughes, J.R.² Powell, M.J.³

9
- 0016597193
- J. Y. W. Seto: J. Appl. Phys. 46 (1975) 5247.
- (1975) J. Appl. Phys. , vol.46 , pp. 5247
- Seto, J.Y.W.¹

10
- 0018032498
- G. Baccarani, B. Ricco and G. Spadini: J. Appl. Phys. 49 (1978) 5565.
- (1978) J. Appl. Phys. , vol.49 , pp. 5565
- Baccarani, G.¹ Ricco, B.² Spadini, G.³

11
- 0019623620
- M. M. Mandurah, K. C. Saraswat and T. I. Kamins: IEEE Trans. Electron Devices 28 (1981) 1163.
- (1981) IEEE Trans. Electron Devices , vol.28 , pp. 1163
- Mandurah, M.M.¹ Saraswat, K.C.² Kamins, T.I.³

12
- 0020707482
- N. C.-C. Lu, L. Gerzberg, C.-Y. Lu and J. D. Meindl: IEEE Trans. Electron Devices 30 (1983) 137.
- (1983) IEEE Trans. Electron Devices , vol.30 , pp. 137
- Lu, N.C.-C.¹ Gerzberg, L.² Lu, C.-Y.³ Meindl, J.D.⁴

13
- 0021452905
- D. P. Joshi and R. S. Srivastava: IEEE Trans. Electron Devices 31 (1984) 920.
- (1984) IEEE Trans. Electron Devices , vol.31 , pp. 920
- Joshi, D.P.¹ Srivastava, R.S.²

14
- 0000944065
- P. V. Evans and S. F. Nelson: J. Appl. Phys. 69 (1991) 3605.
- (1991) J. Appl. Phys. , vol.69 , pp. 3605
- Evans, P.V.¹ Nelson, S.F.²

15
- 0036536114
- H. Ikeda: J. Appl. Phys. 91 (2002) 4637.
- (2002) J. Appl. Phys. , vol.91 , pp. 4637
- Ikeda, H.¹

16
- 0020830319
- H.-K. Lim and J. G. Fossum: IEEE Trans. Electron Devices 30 (1983) 1244.
- (1983) IEEE Trans. Electron Devices , vol.30 , pp. 1244
- Lim, H.-K.¹ Fossum, J.G.²

17
- 0008957105
- G. Fortunato and P. Migliorato: Appl. Phys. Lett. 49 (1986) 1025.
- (1986) Appl. Phys. Lett. , vol.49 , pp. 1025
- Fortunato, G.¹ Migliorato, P.²

18
- 33748621800
- W. Shockley and W. T. Read: Phys. Rev. 87 (1952) 835.
- (1952) Phys. Rev. , vol.87 , pp. 835
- Shockley, W.¹ Read, W.T.²

19
- 36149004075
- R. N. Hall: Phys. Rev. 87 (1952) 387.
- (1952) Phys. Rev. , vol.87 , pp. 387
- Hall, R.N.¹

20
- 0003879668
- John Wiley & Sons, New York
- A. S. Grove: Physics and Technology of Semiconductor Devices (John Wiley & Sons, New York, 1967).
- (1967) Physics and Technology of Semiconductor Devices
- Grove, A.S.¹

21
- 0004005306
- (John Wiley & Sons, New York) 2nd ed.
- S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981) 2nd ed., pp. 84, 367.
- (1981) Physics of Semiconductor Devices , pp. 84
- Sze, S.M.¹

22
- 0019048875
- S. C. Sun and J. D. Plummer: IEEE Trans. Electron Devices 27 (1980) 1497.
- (1980) IEEE Trans. Electron Devices , vol.27 , pp. 1497
- Sun, S.C.¹ Plummer, J.D.²

23
- 0000692416
- K. Yamaguchi: J. Appl. Phys. 89 (2001) 590.
- (2001) J. Appl. Phys. , vol.89 , pp. 590
- Yamaguchi, K.¹

24
- 0022688857
- M.-S. Liang, J. Y. Choi, P.-K. Ko and C. Hu: IEEE Trans. Electron Devices 33 (1986) 409.
- (1986) IEEE Trans. Electron Devices , vol.33 , pp. 409
- Liang, M.-S.¹ Choi, J.Y.² Ko, P.-K.³ Hu, C.⁴

25
- 0004005306
- (John Wiley & Sons, New York) 2nd ed.
- S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981) 2nd ed., p. 382.
- (1981) Physics of Semiconductor Devices , pp. 382
- Sze, S.M.¹

26
- 0034482025
- Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura and Y. Tsuchihashi: Jpn. J. Appl. Phys. 39 (2000) L1209.
- (2000) Jpn. J. Appl. Phys. , vol.39
- Uraoka, Y.¹ Hatayama, T.² Fuyuki, T.³ Kawamura, T.⁴ Tsuchihashi, Y.⁵

27
- 85039538771
- Silvaco International, 4701 Patrick Henry Drive, Bldg. 2, Santa Clara, CA 95054, U.S.A
- Silvaco International, 4701 Patrick Henry Drive, Bldg. 2, Santa Clara, CA 95054, U.S.A.

28
- 0019575076
- C. H. Seager: J. Appl. Phys. 52 (1981) 3960.
- (1981) J. Appl. Phys. , vol.52 , pp. 3960
- Seager, C.H.¹

29
- 0021440989
- P. T. Landsberg and M. S. Abrahams: J. Appl. Phys. 55 (1984) 4284.
- (1984) J. Appl. Phys. , vol.55 , pp. 4284
- Landsberg, P.T.¹ Abrahams, M.S.²

30
- 0017480874
- H. C. Card and E. S. Yang: IEEE Trans. Electron Devices 24 (1977) 397.
- (1977) IEEE Trans. Electron Devices , vol.24 , pp. 397
- Card, H.C.¹ Yang, E.S.²

31
- 0018877130
- A. K. Ghosh, C. Fishman and T. Feng: J. Appl. Phys. 51 (1980) 446.
- (1980) J. Appl. Phys. , vol.51 , pp. 446
- Ghosh, A.K.¹ Fishman, C.² Feng, T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.