A new method of two-step growth of InAs/GaAs quantum dots with higher density and more size uniformity

Nanotechnology

Volumn 17, Issue 1, 2006, Pages 295-299

  Tang, Xiaohong ^a   Yin, Zongyou ^a   Zhao, Jinghua ^a   Deny, Sentosa ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

GROWTH CONDITIONS; GROWTH RATE; HOT DENSITY; LOW PRESSURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 29144480036     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/1/050     Document Type: Article

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