Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters

Sensors and Actuators, A: Physical

Volumn 125, Issue 2, 2006, Pages 422-428

  Kihara, Takashi ^a,c   Harada, Toshihiro ^a,c   Koshida, Nobuyoshi ^{a,b,d,e,f,g,h}  

^a YAMATAKE CORPORATION   (Japan)

^b Research and Development Headquarters   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^d Department of Electronic Device Engineering ^*

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f ELECTROCHEMICAL SOCIETY

^g Material Research Society   (United States)

^h AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Electrochemical anodization; Flat frequency response; Nanocrystalline silicon; Ultrasound emitter

Indexed keywords

ELECTROCHEMICAL ANODIZATION; FLAT FREQUENCY RESPONSE; NANOCRYSTALLINE SILICON; ULTRASOUND EMITTERS;

CRYSTALLINE MATERIALS; DISPERSION (WAVES); ELECTRIC DISTORTION; FREQUENCY RESPONSE; MICROPROCESSOR CHIPS; SILICON; THERMAL CONDUCTIVITY; THERMODYNAMIC PROPERTIES; WSI CIRCUITS;

ULTRASONIC DEVICES;

EID: 29144459888     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.07.021     Document Type: Article

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