Carrier density in a thin silicon layer with nanovoids

Nanotechnology

Volumn 17, Issue 1, 2006, Pages 163-169

  Banerjee, M ^a   Datta, Swapan K ^b   Saha, H ^a  

^a JADAVPUR UNIVERSITY   (India)

^b City College   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; SILICON;

INTERFACE STATE; NANOVOIDS; SILICON LAYERS; SPECIFIC VALUES;

THIN FILMS;

EID: 29144441428     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/1/026     Document Type: Article

References (19)

1. Seel H and Brendel R 2004 Thin Solid Films 451/452 608
2. Rinke T J, Bergmann R B and Werner J H 1999 Appl. Phys. A 68 705
3. Rinke T J, Bergmann R B, Bruggemann R and Werner J H 1999 Solid State Phenom. 67/68 229
4. Bergmann R B, Rinke T J, Hauser R M, Grauvogl M, Vetter M and Werner J H 1999 Int. J. Photoenergy 1 89
5. Majumdar D, Chatterjee S, Dhar M, Dutta S K and Saha H 2003 Sol. Energy Mater. Sol. Cells 77 51
6. Banerjee M, Datta S K and Saha H 2005 Nanotechnology 16 1542
7. Seto J Y W 1975 J. Appl. Phys. 46 5247
8. Ivanov P A, Mynbaeva M G and Saddow S E 2004 Semicond. Sci. Technol. 19 319
9. Tayanaka H, Yamauchi K and Matsushita T 1998 2nd World Conf. & Exhibition on Photovoltaic Solar Energy Conversion (Vienna, Austria) p 1272
10. Berger S, Quoizola S, Fave A, Ouldabbes A, Kaminski A, Perichon S, Chabane-Sari N-E, Barbier D and Laugier A 2001 Cryst. Res. Technol. 36 1005
11. Ott N, Nerding M, Muller G, Brendel R and Strunk H P 2004 J. Appl. Phys. 95 497
12. Parkhutik V and Ibarra E A 1999 Mater. Sci. Eng. B 58 95
13. Boarino L, Geobaldo F, Borini S, Rossi A M, Rivolo P, Rocchia M, Garrone E and Amato G 2001 Phys. Rev. B 64 205308
14. Polisski G, Kovalev D, Dollinger G, Sulima T and Koch F 1999 Physica B 273/274 951
15. Stevenard D and Deresmes D 1995 Appl. Phys. Lett. 67 1570
16. Ben-Chorin M 1997 Properties of Porous Silicon ed L Canham (London: INSPEC) p 165
17. Rhoderick E H 1970 J. Phys. D.: Appl. Phys. 3 1153
18. Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 Phys. Rev. Lett. 82 197
19. Hossain S M, Chakraborty S, Dutta S K, Das J and Saha H 2000 J. Lumin. 91 195