Application of laser beam technology for preparation of oxide thin films

Proceedings of the International Conference on Advanced Optoelectronics and Lasers, CAOL

Volumn 1, Issue , 2003, Pages 149-151

  Kotlyarchuk, B ^a   Savchuk, V ^a  

^a PIDSTRYHACH INSTITUTE FOR APPLIED PROBLEMS OF MECHANICS AND MATHEMATICS   (Ukraine)

Author keywords

Annealing; Laser applications; Laser beams; Manufacturing; Optical films; Optical pulses; Pulsed laser deposition; Transistors; Zinc; Zirconium

Indexed keywords

ANNEALING; DEPOSITION; LASER APPLICATIONS; LASER BEAMS; LASER PULSES; MANUFACTURE; OPTICAL FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; TRANSISTORS; ZINC; ZIRCONIUM;

APPLICATION OF LASER; DEPOSITION CHAMBERS; DEPOSITION PARAMETERS; DIFFERENT SUBSTRATES; ELECTRICAL AND OPTICAL PROPERTIES; OXIDE THIN FILMS; REACTIVE PULSED LASER DEPOSITION; THERMODYNAMICAL;

FILM PREPARATION;

EID: 29044437380     PISSN: 21601518     EISSN: 21601534     Source Type: Conference Proceeding    
DOI: 10.1109/CAOL.2003.1250537     Document Type: Conference Paper

References (5)

1. Takai O., Futsuhara M., Shimizu G., Lungu C.P., Nozue J. Nanostructure of ZnO thin films prepared by reactive rf magnetron sputtering //Thin Solid Films - 1998 -V.318,(1-2) - P.117-119.
2. Tominaga K., Umezu N., Mori I., Ushiro T., Moriga T., Nakabayashi I. Transparent conductive ZnO film preparation by alternating sputtering of ZnO:Al and Zn or Al targets //Thin Solid Films. 1998. - V.334, (1-2) - P 35-39..
3. 2) deposited on strained SiGe layers //Thin Solid Films, V.422, P.33-38, Dec.2002.
4. Jung-Ho Yoo, Seok-Woo Nam, Suheun Nam, Dae-Hong Ko, Ja-Hum Ku, Cheol-Woong Yang, Physical and Electrical Characteristics of ZrO2 Thin Films as a Promising Gate Dielectrics// Journal of Electronic Materaials. - V.31-N7, X5 - July 2002.
5. 7-x films on Si//Appl.Phys.Lett. - 1988 -V.53 - P.243-245.