A spin-on dielectric material for high aspect ratio gap fill

Materials Research Society Symposium Proceedings

Volumn 863, Issue , 2005, Pages 115-120

  Chen, Wei ^a   Wang, Sheng ^a   Ashraf, Ather ^a   Somerville, Edward ^a   Nowaczyk, Gerard ^a   Hwang, B K ^a   Lee, J K ^a   Moyer, Eric S ^a   Waldfried, Carlo ^b   Escocia, Orlando ^b   Han, Qingyuan ^b  

^a DOW CORNING CORPORATION   (United States)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DENSIFICATION; ETCHING; HYDROGEN; SPIN GLASS; TRENCHING;

MATERIAL DENSIFICATION; SHALLOW TRENCH ISOLATION (STI); THERMAL PROCESSING;

DIELECTRIC MATERIALS;

EID: 28844490611     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-863-b8.5     Document Type: Conference Paper

References (4)

1. Bayman, A., et al., US Patent 6,596,654 B1,2003
2. Shimizu, Y., T. Aoki, and O. Funayama, US Patent, 6,310,168 B1,2001
3. Park, J.H., et al., J. Electrochem. Soc., 2003. 150: p. G359.
4. Li, Z., et al. Proceedings of Material Research Society Meetings, 2002, Vol 716, 325.