Stress generation in PECVD silicon nitride thin films for microelectronics applications

Materials Research Society Symposium Proceedings

Volumn 863, Issue , 2005, Pages 97-102

  Belyansky, M ^a   Klymko, N ^a   Madan, A ^a   Mallikarjunan, A ^a   Li, Y ^a   Chakravarti, A ^a   Deshpande, S ^a   Domenicucci, A ^a   Bedell, S ^a   Adams, E ^a   Coffin, J ^a   Tai, L ^a   Sun, S P ^b   Widodo, J ^c   Lai, C W ^c  

^a IBM   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c Chartered Semiconductor Manufacturing   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DEGRADATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MULTILAYERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; STRESS ANALYSIS; THIN FILMS;

COMPRESSIVE FILMS; SIN FILMS; STRESS FORMATION; X-RAY REFLECTIVITY (XRR);

MICROELECTRONICS;

EID: 28844470390     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-863-b7.9/o11.9     Document Type: Conference Paper

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