Charge trapping by oxygen-related defects in HfO2-based High-k gate dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 648-649

  Yamabe, K ^a,e   Goto, M ^a   Higuchi, K ^a   Uedono, A ^a,e   Shiraishi, K ^a,e   Miyazaki, S ^b,e   Torii, K ^d   Boero, M ^a   Chikyow, T ^e   Yamasaki, S ^f   Kitajimai, H ^d   Yamada, K ^c,e   Arikado, T ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; CHARGE TRAPPING; HIGH-K DIELECTRIC FILMS; VOLTAGE STRESSES;

CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS;

DIELECTRIC FILMS;

EID: 28744458785     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. G.D.Wilk, R.M.Wallace and J.M.Anthony; Appl. Phys.Rev., 89(2001)5243.
2. M.Koyama, H,Satake, M.Koike, T.Ino, M.Suzuki, R.Iizima, Y.Kamimura, A.Takashima, C.Hongo and A.Nishiyama; IEDM Tech.Digest, (2003).
3. K. Shimoyama, M. Kiyohara, K. Kubo, A. Uedono, K. Yamabe; J. Appl. Phys., 92 (2002) 4625.
4. A.Uedono, K.Shimoyama, M.Kiyohara, Z.Q.Chen, K.Yamabe, T.Ohdaira, R.Suzuki and T.Mikado; J.Appl. Phys., 91, No.8(2002)5307-5312.
5. E. Suzuki, Y. Hayashi, H. Yanai; J. Appl. Phys., 50 (1979) 7001.
6. M. Goto, K. Higuchi, K. Torii, K. Yamabe; Jpn.J. Appl.Phys., 43 (2004), 7826.