Comparative reliability investigation of different nitride based local charge trapping memory devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 181-185

  Breuil, L ^a   Haspeslagh, L ^a   Blomme, P ^a,b   Lorenzini, M ^a   Wellekens, D ^a   De Vos, J ^a   Van Houdt, J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING DEVICES; ELECTRON INJECTION; HOLE INJECTION; HOLE TRAPPING;

DEGRADATION; ELECTRIC CHARGE; NITRIDES; RELIABILITY;

DATA STORAGE EQUIPMENT;

EID: 28744456320     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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