Random charge effects for PMOS NBTI in ultra-small gate area devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 529-532

  Agostinelli, M ^a   Pae, S ^a   Yang, W ^a   Prasad, C ^a   Kencke, D ^a   Ramey, S ^a   Snyder, E ^b   Kashyap, S ^a   Jones, M ^a  

^a INTEL CORPORATION   (United States)

^b ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744454913     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. S. Ogawa et al., "Interface-trap generation at ultrathin SiO2 (4-6 nm)-Si interfaces during negative bias temperature aging", Phys. Rev. B, 1995, pp. 1137-1148
3. G. La Rosa et al., "NBTI-channel hot carrier efects in PMOSFETs in advanced CMOS technologies", IRPS 1997, pp. 282-286
4. D. Ielmini et al., "A new channel percolation model for Vt shift in discrete-trap memories", IRPS, 2004, pp. 515-521
5. R. Keyes, "Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics", IEEE Journal of Sold State Circuits, Aug 1975, pp. 245-247
6. K. Kuhn, "A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1um2 6-T SRAM cell, IEDM, 2002, pp. 73-76