The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Lv, P C ^a   Zhang, X ^a   Kolodzey, J ^a   Odnoblyudov, M A ^b   Yassievich, I N ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; POLARIZATION EFFECTS;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; PHOSPHORUS; POLARIZATION; SILICON; STRAIN;

COMPRESSIVE STRESS;

EID: 28644439700     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132516     Document Type: Article

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