Comparison of the layered semiconductors GaSe, GaS, and GaSe 1-x S x by Raman and photoluminescence spectroscopy

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  León, C Ṕrez ^a   Kador, L ^a   Allakhverdiev, K R ^b,c   Baykara, T ^b   Kaya, A A ^b  

^a UNIVERSITY OF BAYREUTH   (Germany)

^b MATERIALS INSTITUTE   (Turkey)

^c INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL CONFIGURATION; WANNIER EXCITONS;

ABSORPTION; CRYSTAL STRUCTURE; PHOTOLUMINESCENCE; PHOTONS; RAMAN SPECTROSCOPY; SULFUR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 28644439441     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135411     Document Type: Article

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