A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5853 PART I, Issue , 2005, Pages 58-65

  Park, Eui Sang ^a   Cho, Hyun Joon ^a   Kim, Jin Min ^a   Choi, Sang Soo ^a  

^a PKL Photronics   (South Korea)

Author keywords

EID (Energy Intensity Distribution); Fogging effect; PEC (Proximity Effect Correction); VSB (Variable Shaped Beam)

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; DISTANCE MEASUREMENT; ENERGY ABSORPTION; PARAMETER ESTIMATION;

EID (ENERGY INTENSITY DISTRIBUTION); FOGGING EFFECT; PEC (PROXIMITY EFFECT CORRECTION); VSB (VARIABLE SHAPED BEAM);

OPTICAL ENGINEERING;

EID: 28544452917     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617065     Document Type: Conference Paper

References (4)

1. Takashi KAMIKUBO, Proximity Effect Correction For Electron Beam Lithography, Advanced Semiconductor Devices Research Labs, Jpn.J.Appl.Phys. Vol 36, 1997.
2. Charles Sauer, Electron-beam lithography simulation for maskmaking, part IV: Effect of resist contrast on isofocal dose, Etec System, Proc.of SPIE Vol 3748, 1999.
3. Chris A. Mack, Electron Beam Lithography Simulation for Mask Making, Part VI: Comparison of 10 and 50 kV GHOST Proximity Effect Correction, KLA-Tencor, Proc.of SPIE Vol 4409, 2001.
4. SH.Yang, Fogging Effect Consideration in Mask Process at 50KeV E-Beam Systems, SAMSUNG ELECTRONICS, Pro.of SPIE Vol 4889, 2002.