Reticle SEM specifications required for lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5853 PART II, Issue , 2005, Pages 550-555

  Kariya, Mitsuyo ^a   Yamanaka, Eiji ^b   Tanaka, Satoshi ^b   Ikeda, Takahiro ^b   Yamaguchi, Shinji ^b   Itoh, Masamitsu ^b   Kobayashi, Hideaki ^b   Kawashima, Tsukasa ^b   Narukawa, Shogo ^b  

^a TOSHIBA CORPORATION   (Japan)

^b DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

FOV; Image distortion; Lithography simulation; Magnification; OPC; Optical lithography; Pattern assurance; Reticle; SEM

Indexed keywords

COMPUTER SIMULATION; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY;

LITHOGRAPHY SIMULATION; RETICLE PATTERN;

LITHOGRAPHY;

EID: 28544443666     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617130     Document Type: Conference Paper

References (2)

1. rd Annual BACUS Symposium on Photomask Technology, Vol. 5256, 607-618, 2003.
2. Takahiro Ikeda, Yumiko Miyano, Toshiya Kotani, Toru Shibata, and Osamu Ikenaga, "Optical Proximity Correction Feature Extraction Method Using Reticle Scanning Electron Microscope Images", Jpn. J. Appl. Phys., Vol. 42, 3937-3941, 2003.