Modelling of ion implantation in SiC crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 690-692

  Chakarov, Ivan ^a   Temkin, Misha ^a  

^a Silvaco Data Systems Inc   (United States)

Author keywords

Channeling; Doping; Implantation; Ion; Modelling; SiC

Indexed keywords

COMPUTER AIDED DESIGN; DOPING (ADDITIVES); HYDROGEN; IONS; MATHEMATICAL MODELS; SILICON CARBIDE; SIMULATORS;

CHANNELING; IMPLANTATION; MODELING; SIC;

ION IMPLANTATION;

EID: 28544440497     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.090     Document Type: Conference Paper

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