Dislocation networks in conventional and surfactant-mediated Ge/Si(1 1 1) epitaxy

Surface Science

Volumn 599, Issue 1-3, 2005, Pages 76-84

  Filimonov, S N ^a,d   Cherepanov, V ^a   Paul, N ^a   Asaoka, H ^a,b   Brona, J ^a,c   Voigtlander B ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF WROC AW   (Poland)

^d TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Bismuth; Dislocations; Elasticity theory; Germanium; Molecular beam epitaxy; Scanning tunnelling microscopy; Silicon; Strain relaxation

Indexed keywords

BISMUTH; ELASTICITY; GERMANIUM; GERMANIUM ALLOYS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; STRAIN; SURFACE ACTIVE AGENTS;

DISLOCATIONS; ELASTICITY THEORY; INTERFACIAL MISFIT DISLOCATIONS; STRAIN RELAXATION;

DISLOCATIONS (CRYSTALS);

EID: 28544439407     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.09.039     Document Type: Article

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