Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films

Proceedings of the IEEE INDICON 2004 - 1st India Annual Conference

Volumn , Issue , 2004, Pages 538-541

  Joshi, Manoj ^a   Singh, Sunil ^a   Swain, Bibhu ^a   Patil, Samadhan ^a   Dusane, Rajiv ^a   Rao, Ramgopal ^a   Mukherji, Soumyo ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b NONE

Author keywords

AEAPS; HIgG; HWCVD; Silanization

Indexed keywords

HIGG; HWCVD; SILANIZATION;

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FLUORESCENCE; MORPHOLOGY; SILICON; SPECTROSCOPIC ANALYSIS; THIN FILMS;

ANTIBODIES;

EID: 28444486388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. Li-Te Yin, Jung-Chun Chou et. al., "Characteristics of Silicon Nitride after O2 Plasma Surface Treatment for pH-ISFET Applications," IEEE Transactions on Biomedical Engineering, vol. 48, no.3, March 2001.
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