Single-electron transistor mediated by C60 insertion inside a carbon nanotube

Applied Physics Letters

Volumn 87, Issue 16, 2005, Pages 1-3

  Yu, H Y ^a,c   Lee, D S ^a   Lee, S H ^a   Kim, S S ^a   Lee, S W ^a   Park, Y W ^a   Dettlaff Weglikowskaand, U ^b   Roth, S ^b  

^a Seoul National University   (South Korea)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC CONDUCTANCE; ELECTRIC PROPERTIES;

GATE VOLTAGE; SINGLE-ELECTRON TRANSISTORS; SOURCE-DRAIN VOLTAGE;

TRANSISTORS;

EID: 28344447991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2112195     Document Type: Article

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