Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

Solar Energy Materials and Solar Cells

Volumn 90, Issue 3, 2006, Pages 291-300

  Rusop, M ^a   Soga, T ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

n C:P; PECVD; Phosphorus doping; Photovoltaic; Solar cell

Indexed keywords

CARBON; ELECTRIC RESISTANCE; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; THERMAL EFFECTS;

N-C:P; PHOSPHOROUS DOPING; PHOTOVOLTAIC; ROOM TEMPERATURE;

PHOTOVOLTAIC CELLS;

EID: 28244495075     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.03.016     Document Type: Article

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