Characterization of phosphorus-doped amorphous carbon and construction of n-carbon/p-silicon heterojunction solar cells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2339-2344

  Rusop, Mohamad ^a   Mominuzzaman, Shariff M ^b   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^c CHUBU UNIVERSITY   (Japan)

Author keywords

Carbon; Phosphorus doping; Photovoltaic solar cell; Pulsed laser deposition

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; FERMI LEVEL; HETEROJUNCTIONS; PHOSPHORUS; PULSED LASER DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING;

AMORPHOUS CARBON; CAMPHORIC C TARGET; PHOTOVOLTAIC SOLAR CELL;

SOLAR CELLS;

EID: 0038347743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2339     Document Type: Article

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