Ultra-broadband 20.5-31 GHz monolithically-integrated CMOS power amplifier

Electronics Letters

Volumn 41, Issue 23, 2005, Pages 33-34

  Vasylyev, A ^a   Weger, P ^a   Simburger W ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL;

CMOS POWER AMPLIFIERS; POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 28244492848     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053261     Document Type: Article

References (5)

1. Elinger, F.: ' 60-GHz SOI travelling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz ', IEEE J. Solid-State Circuits, 2005, 40, (2), p. 553-558
2. Komijani, A., and Hajimiri, A.: ' A 24 GHz, +14.5 dBm fully-integrated power amplifier in 0.18 μm CMOS ', Proc. IEEE 2004 Custom Integrated Circuits Conf., October 2004, p. 561-564
3. Fujii, K., and Morkner, H.: ' 1 W power amplifier MMICs for mm wave applications ', IEEE MTT-S Int. Microw. Symp. Dig., 2004, p. 1665-1668
4. T SiGe-bipolar ', Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meet., September 2003, p. 61-64
5. Vasylyev, A., Weger, P., Bakalski, W., and Simbuerger, W.: ' Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer ', Electron. Lett., 2005, 41, (16), p. 908-909