Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer

Electronics Letters

Volumn 41, Issue 16, 2005, Pages 908-909

  Vasylyev, A ^a   Weger, P ^a   Bakalski, W ^b   Simburger W ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRIC TRANSFORMERS; SEMICONDUCTING SILICON COMPOUNDS; TECHNOLOGY TRANSFER;

BIPOLAR TECHNOLOGY; EXTERNAL COMPONENTS; OUTPUT POWER; TRANSFORMER STRUCTURE;

POWER AMPLIFIERS;

EID: 23944505557     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051740     Document Type: Article

References (6)

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2. Simbuerger, W., Wohlmuth, H.D., Weger, P., and Heinz, A.: 'A monolithic transformer coupled 5 W silicon power amplifier with 59% PAE at 0.9 GHz', IEEE J. Solid-State Circuits, 1999, 34, (12), pp. 1881-1892
3. Scuderi, A., Paglia, L.L., Scuderi, A., Carrara, F., and Palmisano, G.: 'A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control', IEEE J. Solid-State Circuits, 2005, 40, (3), pp. 611-621
4. Aoki, I., Kee, S., Rutledge, D., and Hajimiri, A.: 'A fully-integrated 1.8-V, 2.9-W, 1.9-GHz, CMOS power amplifier'. IEEE Radio Frequency Integrated Circuits (RFIC) Symp., June 2003, pp. 199-202
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6. Bakalski, W, Kitlinski, K., Donig, G., Kapfelsperger, B., Kuehn, C., Ahrens, C., Oesterreicher, W, Auchter, W, Weigel, R., and Scholtz, A.L.: 'Design of a dual-band wireless LAN SiGe-bipolar power amplifier', High Freq. Electron., 2004, 3, (8)