Different SiH4 treatments of CVD TiN barrier layers

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 618-622

  Bonitz, J ^a   Ecke, R ^a   Schulz, S E ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

CVD Ti(Si)N; Film composition; Silane; TEM; Ternary diffusion barrier; TOF SIMS

Indexed keywords

COPPER; DENSIFICATION; ELECTRIC CONDUCTIVITY; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CVD TI (SI)N; FILM COMPOSITION; SILANE; TERNARY DIFFUSION BARRIERS; TOF-SIMS;

SILICON COMPOUNDS;

EID: 28044466425     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.066     Document Type: Conference Paper

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