Irradiation of silicon surface by Ar cluster ion beam: Cluster size effects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 241, Issue 1-4, 2005, Pages 618-621

  Nakayama, Y ^a   Houzumi, S ^a   Toyoda, N ^a   Mochji, K ^a   Mitamura, T ^a   Yamada, I ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

Cluster size; Damage formation; GCIB

Indexed keywords

ATOMS; COMPUTER SIMULATION; ELLIPSOMETRY; ION BEAMS; IRRADIATION; MOLECULAR DYNAMICS; SURFACE STRUCTURE;

CLUSTER SIZE; DAMAGE FORMATION; GAS CLUSTER ION BEAMS (GCIB);

SEMICONDUCTING SILICON;

EID: 28044465157     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.07.084     Document Type: Conference Paper

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