Novel low-k polycyanurates for integrated circuit (IC) metallization

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 356-361

  Schulze, K ^a   Schuldt, U ^b   Kahle, O ^b   Schulz, S E ^a   Uhlig, M ^a   Uhlig, C ^c   Dreyer, C ^b   Bauer, M ^b   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c FRAUNHOFER IZM   (Germany)

Author keywords

Copper damascene technology; Low k; Polycyanurates; ULK

Indexed keywords

COPPER; DIELECTRIC MATERIALS; METALLIZING; MONOMERS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THIN FILMS;

COPPER DAMASCENE TECHNOLOGY; LOW-K; POLYCYANURATES; ULK;

INTEGRATED CIRCUITS;

EID: 28044461502     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.016     Document Type: Conference Paper

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