NVM based on FinFET device structures

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1799-1804

  Hofmann, F ^a   Specht, M ^a   Dorda, U ^a   Kommling R ^a   Dreeskornfeld, L ^a   Kretz, J ^a   Stadele M ^a   Rosner W ^a   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Charge trapping memory; FinFET; Flash; NROM; NVM; SONOS; Tri gate transistor

Indexed keywords

COMPUTER PROGRAMMING; DATA REDUCTION; ENERGY UTILIZATION; GATES (TRANSISTOR); LOGIC DEVICES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

CHARGE TRAPPING MEMORIES; FINFET; FLASH; NROM; NVM; SONOS; TRI-GATE TRANSISTORS;

FLASH MEMORY;

EID: 28044440486     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.012     Document Type: Article

References (7)

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