Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 675-679

  Vairagar, A V ^a,b   Mhaisalkar, S G ^a   Meyer, M A ^b   Zschech, E ^b   Krishnamoorthy, Ahila ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b IBM MICROELECTRONICS   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cu damascene; Electromigration; Reservoir effect

Indexed keywords

CATHODES; COPPER; COPPER COMPOUNDS; NUCLEATION; OPTICAL INTERCONNECTS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TENSILE STRESS;

CU DAMASCENE; RESERVOIR EFFECT; VACANCY FLUX;

ELECTROMIGRATION;

EID: 28044434873     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.076     Document Type: Conference Paper

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