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Volumn , Issue , 2005, Pages 659-662

A germanium back contact type cell for thermophotovoltaics

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; LIGHT EMISSION; PASSIVATION; QUANTUM EFFICIENCY; REFRACTIVE INDEX;

EID: 27944498716     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (7)
  • 1
    • 0033882476 scopus 로고    scopus 로고
    • Characterization and simulation of GaSb device-related properties
    • G. Stollwerck, O.V. Sulima and A.W. Bett, "Characterization and Simulation of GaSb Device-Related Properties", IEEE Transactions on Electron Devices, 47(2), 2000, pp. 448-457.
    • (2000) IEEE Transactions on Electron Devices , vol.47 , Issue.2 , pp. 448-457
    • Stollwerck, G.1    Sulima, O.V.2    Bett, A.W.3
  • 7
    • 0842269051 scopus 로고    scopus 로고
    • High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system
    • J.D. Moschner, J. Henze, J. Schmidt and R. Hezel, "High-quality Surface Passivation of Silicon Solar Cells in an Industrial-type Inline Plasma Silicon Nitride Deposition System", Prog. Photovolt: Res. Appl. 2004; 12: pp. 21-31.
    • (2004) Prog. Photovolt: Res. Appl. , vol.12 , pp. 21-31
    • Moschner, J.D.1    Henze, J.2    Schmidt, J.3    Hezel, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.