-
1
-
-
0038575800
-
2 thin-film solar cells
-
2 Thin-film Solar Cells. Progress in Photovoltaics: Research and Applications 11, 225 (2003).
-
(2003)
Progress in Photovoltaics: Research and Applications
, vol.11
, pp. 225
-
-
Ramanathan, K.1
Contreras, M.A.2
Perkins, C.L.3
Asher, S.4
Hasoon, F.S.5
Keane, J.6
Young, D.7
Romero, M.8
Metzger, W.9
Noufi, R.10
Ward, J.11
Duda, A.12
-
2
-
-
0001345463
-
Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions
-
T. Walter, R. Herberholz, C. Muller, and H. W. Schock, Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions. J. Appl. Phys. 80, 4411 (1996).
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 4411
-
-
Walter, T.1
Herberholz, R.2
Muller, C.3
Schock, H.W.4
-
3
-
-
1142269587
-
Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capactiance profiling
-
J. T. Heath, J. D. Cohen, and W. N. Shafarman, Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capactiance profiling. Journal of Applied Physics 95, 1000 (2004).
-
(2004)
Journal of Applied Physics
, vol.95
, pp. 1000
-
-
Heath, J.T.1
Cohen, J.D.2
Shafarman, W.N.3
-
4
-
-
0033906820
-
Transient capacitance spectroscopy of defect levels in CIGS devices
-
M. Igalson and P. Zabierowski, Transient capacitance spectroscopy of defect levels in CIGS devices. Thin Solid Films 361-362, 371 (2000).
-
(2000)
Thin Solid Films
, vol.361-362
, pp. 371
-
-
Igalson, M.1
Zabierowski, P.2
-
5
-
-
0031672233
-
Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopy
-
R. Herberholz, M. Igalson, and H. W. Schock, Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopy. J. Appl. Phys. 83, 318 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 318
-
-
Herberholz, R.1
Igalson, M.2
Schock, H.W.3
-
6
-
-
0033882355
-
Charging and discharging of defect states in CIGS/ZnO junctions
-
A. E. Delahoy, A. Ruppert, and M. Contreras, Charging and discharging of defect states in CIGS/ZnO junctions. Thin Solid Films 361-362, 140 (2000).
-
(2000)
Thin Solid Films
, vol.361-362
, pp. 140
-
-
Delahoy, A.E.1
Ruppert, A.2
Contreras, M.3
-
9
-
-
0027906944
-
Relaxation of the D cener in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap
-
J. D. Cohen, T. M. Leen, and F. Zhong, Relaxation of the D cener in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap. Journal of Non-Crystalline Solids 164-166, 327 (1993).
-
(1993)
Journal of Non-crystalline Solids
, vol.164-166
, pp. 327
-
-
Cohen, J.D.1
Leen, T.M.2
Zhong, F.3
-
11
-
-
0012523557
-
2
-
2. Applied Physics Letters 69, 2888 (1996).
-
(1996)
Applied Physics Letters
, vol.69
, pp. 2888
-
-
Herberholz, R.1
Walter, T.2
Muller, C.3
Friedlmeier, T.4
Schock, H.W.5
Saad, M.6
Lux-Steiner, M.C.7
Alberts, V.8
-
12
-
-
0027625275
-
The Meyer-Neldel Rule in Emission Rates from defects in copper indium diselenide
-
F. R. Shapiro and J. R. Tuttle, The Meyer-Neldel Rule in Emission Rates from defects in copper indium diselenide. Solid State Communications 87, 199 (1993).
-
(1993)
Solid State Communications
, vol.87
, pp. 199
-
-
Shapiro, F.R.1
Tuttle, J.R.2
-
13
-
-
0016081559
-
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
-
D. V. Lang, Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. Journal of Applied Physics 45, 3023 (1974).
-
(1974)
Journal of Applied Physics
, vol.45
, pp. 3023
-
-
Lang, D.V.1
-
15
-
-
0037113547
-
Meyer-Neldel rule in charge-trapping metastability in p-type hydrogenated amorphous silicon
-
R. S. Crandall, Meyer-Neldel rule in charge-trapping metastability in p-type hydrogenated amorphous silicon. Physical Review B 66, 195210 (2002).
-
(2002)
Physical Review B
, vol.66
, pp. 195210
-
-
Crandall, R.S.1
-
17
-
-
27944502232
-
Origin and consequences of the compensation (Meyer-Neldel) law
-
A. Yelon, B. Movaghar, and H. M. Branz, Origin and consequences of the compensation (Meyer-Neldel) law. Physical Review B 46, 12244 (1992).
-
(1992)
Physical Review B
, vol.46
, pp. 12244
-
-
Yelon, A.1
Movaghar, B.2
Branz, H.M.3
-
18
-
-
0041877246
-
Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap cature cross sections
-
S. W. Johnston, R. S. Crandall, and A. Yelon, Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap cature cross sections. Applied Physics Letters 83, 908 (2003).
-
(2003)
Applied Physics Letters
, vol.83
, pp. 908
-
-
Johnston, S.W.1
Crandall, R.S.2
Yelon, A.3
-
19
-
-
27944479291
-
-
Ph.D Thesis in Physics (Colorado School of Mines, Golden)
-
J. A. AbuShama, Ph.D Thesis in Physics (Colorado School of Mines, Golden, 2003), p. 205.
-
(2003)
, pp. 205
-
-
Abushama, J.A.1
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