Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

Applied Surface Science

Volumn 252, Issue 5, 2005, Pages 2071-2077

  Wang, X C ^a   Lim, G C ^a   Liu, W ^b   Soh, C B ^c   Chua, S J ^b,c  

^a SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

248 nm KrF excimer laser; Electrical property; Laser induced activation; Mg doped GaN; Optical property

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE;

248 NM EXCIMER LASER; LASER-INDUCED ACTIVATION; MG-DOPED GEN;

LASER BEAM EFFECTS;

EID: 27944475569     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.195     Document Type: Article

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