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Volumn , Issue , 2005, Pages 519-524

Future development of LnGaP/(in)GaAs based multijuntion solar cells

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THIN FILMS;

EID: 27944472333     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (30)
  • 2
    • 27944482190 scopus 로고
    • US Patent: 4,667,059
    • J. M. Olson, US Patent: 4,667,059 (1987).
    • (1987)
    • Olson, J.M.1
  • 5
    • 27944503404 scopus 로고    scopus 로고
    • US Patent: 6,380,601
    • J. Ermer et al, US Patent: 6,380,601 (2002).
    • (2002)
    • Ermer, J.1
  • 9
    • 6344261975 scopus 로고    scopus 로고
    • Ultra triple junction GaInP2/GaAs/Ge solar cells: Cell desiign and qualification status
    • Osaka
    • rd WCPEC, Osaka (2003).
    • (2003) rd WCPEC
    • Granata, E.1    Fetzer, C.2
  • 13
    • 27944444973 scopus 로고    scopus 로고
    • ENTECH's 20-year heritage and future plans in photovoltaic concentrators for both ground and space applications
    • Alice Springs
    • M. J. O'Neil, "ENTECH's 20-Year Heritage and Future Plans in Photovoltaic Concentrators for Both Ground and Space Applications", Presented at Solar Concentrator Conference, Alice Springs, (2003).
    • (2003) Solar Concentrator Conference
    • O'Neil, M.J.1
  • 18
    • 27944441316 scopus 로고    scopus 로고
    • US Patent: 6,252,287
    • US Patent: 6,252,287
  • 25
    • 84865622909 scopus 로고    scopus 로고
    • Bringing SOI wafer technology to the mainstream
    • November
    • Ruth DeJule. Bringing SOI wafer technology to the mainstream. Semiconductor International, November, 1998.
    • (1998) Semiconductor International
    • Dejule, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.