N-type multicrystalline silicon solar cells with BBr3-diffused front junction

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1209-1212

  Libal, J ^a   Petres, R ^a   Kopecek, R ^a   Hahn, G ^a   Wambach, K ^b   Fath, P ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b Deutsche Solar AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ETCHING; PHOTOLITHOGRAPHY; SOLAR CELLS;

EMITTER DIFFUSION; TUBE FURNANCE;

CRYSTALLINE MATERIALS;

EID: 27944466819     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A.Cuevas et al., N-type multicrystalline Silicon: a stable high lifetime material, WCPEC, Osaka, May 2003
2. L.J. Geerligs and D. Macdonald, Base doping and recombination activity of impurities in crystalline silicon solar cells, Progress in Photovoltaics 12, 309 (2004);
3. th ECPVSEC Paris,2004
4. th ECPVSEC, Barcelona, 1997, p. 2416-2419
5. x:H films, Appl. Phys. Letters, Vol 79, 14, 2001
6. Zhao et al., Performance instability in n-type PERT silicon solar cells, WCPEC, Osaka, May 2003
7. M. Kerr, Surface, emitter and bulk recombination in silicon and development of silicon nitride passivated solar cells, PhD thesis 2002 at ANU, Canberra (Australia)
8. A. Schneider et al, Comparison of gettering effects during phosphorous diffusion for one- and double-sided emitters, this conference