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Volumn , Issue , 2005, Pages 1115-1118

The effect of the variation in resistivity and lifetime on the solar cells performance along the commercially grown Ga- and B-doped czochralski ingots

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY DISTRIBUTIONS; LIGHT-INDUCED DEGRADATION (LID); THINNER SUBSTRATES;

EID: 27944464137     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2005.1488331     Document Type: Conference Paper
Times cited : (6)

References (9)
  • 1
    • 0015973475 scopus 로고
    • Investigation of photon and thermal induced changes in silicon solar cells
    • H. Fischer and W. Pschunder, "Investigation of Photon and Thermal Induced Changes in Silicon Solar Cells", Tenth IEEE PVSC, 1973, pp. 404-411.
    • (1973) Tenth IEEE PVSC , pp. 404-411
    • Fischer, H.1    Pschunder, W.2
  • 3
    • 0031370370 scopus 로고    scopus 로고
    • Investigation of carrier lifetime instabilities in Cz-grown silicon
    • J. Schmidt, A.G. Aberle, and R. Hezel, "Investigation of Carrier Lifetime Instabilities in Cz-Grown Silicon", Twenty-sixth IEEE PVSC, 1997, pp. 13-18.
    • (1997) Twenty-sixth IEEE PVSC , pp. 13-18
    • Schmidt, J.1    Aberle, A.G.2    Hezel, R.3
  • 5
    • 0036565679 scopus 로고    scopus 로고
    • Design optimization for higher stabilized efficiency and reduced light induced degradation in boron doped czochralski silicon solar cells
    • B. Damiani, A.M. Ristow, A. Ebong, and A. Rohatgi, "Design Optimization for Higher Stabilized Efficiency and Reduced Light Induced Degradation in Boron Doped Czochralski Silicon Solar Cells", Progress in Photovoltaics 10, 2001, pp. 185-193.
    • (2001) Progress in Photovoltaics , vol.10 , pp. 185-193
    • Damiani, B.1    Ristow, A.M.2    Ebong, A.3    Rohatgi, A.4
  • 6
    • 0036948620 scopus 로고    scopus 로고
    • Effective reduction of the metastable defect concentration in boron-doped czochralski silicon for solar cells
    • K. Bothe, J. Schmidt, and R. Hezel, "Effective Reduction of the Metastable Defect Concentration in Boron-Doped Czochralski Silicon for Solar Cells", Twenty-ninth IEEEPVSC, 2002, pp. 194-197.
    • (2002) Twenty-ninth IEEEPVSC , pp. 194-197
    • Bothe, K.1    Schmidt, J.2    Hezel, R.3
  • 8
    • 0035507264 scopus 로고    scopus 로고
    • Improvement of charge minority-carrier lifetime in p (boron)-type czochralski silicon by rapid thermal annealing
    • J.Y. Lee, S. Peters, S. Rein, and S.W. Glunz, "Improvement of Charge Minority-Carrier Lifetime in P (Boron)-Type Czochralski Silicon by Rapid Thermal Annealing, Prog. Photovolt: Res. Appl. 9, 2001, pp. 417-424.
    • (2001) Prog. Photovolt: Res. Appl. , vol.9 , pp. 417-424
    • Lee, J.Y.1    Peters, S.2    Rein, S.3    Glunz, S.W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.