Photocurrent relaxation in AsxSe1-x thin films: Compositional dependence

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 5, 2005, Pages 2317-2322

  Iovu, M S ^a   Vasiliev, I A ^a   Harea, D V ^a   Colomeico, E P ^a  

^a Center of Optoelectronics   (Moldova)

Author keywords

Amorphous arsenic selenium films; Defect centers; Photocurrent relaxation

Indexed keywords

DEFECTS; SELENIUM COMPOUNDS; THIN FILMS;

COMPOSITIONAL DEPENDENCE; DEFECT CENTERS; DENSITY OF STATE; MONOCHROMATIC LIGHT; PHOTOCURRENT ANALYSIS; PHOTOCURRENT SPECTRUM; RELAXATION TECHNIQUES; TIME OF FLIGHT;

PHOTOCURRENTS;

EID: 27944461847     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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