The effect of oxide trenches on defect formation and evolution in ion-implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 201-205

  Burbure, Nina ^a   Jones, Kevin S ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; RAPID THERMAL ANNEALING; SILICON WAFERS; STACKING FAULTS; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT FORMATION; OXIDE TRENCHES; SOLID PHASE EPITAXIAL REGROWTH (SPER); SPIKE ANNEALING;

AMORPHOUS SILICON;

EID: 5544303589     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c4.19     Document Type: Conference Paper

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